US Patent Issued to Purdue Research Foundation on Nov. 25 for "MOS-based power semiconductor device having increased current carrying area and method of fabricating same" (New Mexico Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,268, issued on Nov. 25, was assigned to Purdue Research Foundation (West Lafayette, Ind.).

"MOS-based power semiconductor device having increased current carrying area and method of fabricating same" was invented by James A. Cooper (Santa Fe, N.M.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, drift, source, gate and base regions, and a drain portion. The substrate is doped with a first dopant type. The drift region is disposed above the semiconductor substrate, and is doped with the first dopant type at a lower concentration. The source region is doped with the first dopant type. The gate region is dispo...