ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,635, issued on June 3, was assigned to Purdue Research Foundation (West Lafayette, Ind.).

"Delamination processes and fabrication of thin film devices thereby" was invented by Chi Hwan Lee (West Lafayette, Ind.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Interfacial delamination processes for physically separating a film structure from a substrate, and processes of fabricating a thin-film electronic device. The processes entail providing the substrate with an electrically-conductive separation layer on a surface of the substrate and optionally providing a pin hole free barrier layer on the electrically-conductive separation layer, forming a film s...