ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,186, issued on April 15, was assigned to Purdue Research Foundation (West Lafayette, Ind.).
"Ultra-thin diffusion barrier" was invented by Zhihong Chen (West Lafayette, Ind.) and Chun-Li Lo (West Lafayette, Ind.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of providing a barrier to diffusion of metal into a dielectric in a metal interconnect arrangement is disclosed which includes forming a damascene trench, including forming a dielectric base, with a trench made therein, depositing one or more two dimensional diffusion barrier layers formed over the trench, depositing a conductor layer formed atop the diffusion layer, wherein the one or m...