US Patent Issued to PseudolithIC on March 25 for "Chip integration into cavities of a host wafer using lateral dielectric material bonding" (California, Virginia Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,091, issued on March 25, was assigned to PseudolithIC Inc. (Santa Barbara, Calif.).

"Chip integration into cavities of a host wafer using lateral dielectric material bonding" was invented by Florian Herrault (Agoura Hills, Calif.), Isaac Rivera (Buena Park, Calif.), Daniel S. Green (McLean, Va.) and James F. Buckwalter (Santa Barbara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic assembly has a backside capping layer, a host wafer having a back surface bonded to a top surface of the backside capping layer except for cavities in the wafer formed over areas of the backside capping layer, the cavities having side surfaces of the ...