US Patent Issued to pSemi on June 3 for "Standby voltage condition for fast RF amplifier bias recovery" (British, American Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,323,105, issued on June 3, was assigned to pSemi Corp. (San Diego).

"Standby voltage condition for fast RF amplifier bias recovery" was invented by Poojan Wagh (Sleepy Hollow, Ill.) and Kashish Pal (Reading, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit standby current during operation in the standby mode while allowing a quick recovery to normal operating conditions of the amplif...