US Patent Issued to pSemi on June 24 for "Transistor bias adjustment for optimization of third order intercept point in a cascode amplifier" (California Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,474, issued on June 24, was assigned to pSemi Corp..

"Transistor bias adjustment for optimization of third order intercept point in a cascode amplifier" was invented by Rong Jiang (San Diego) and Haopei Deng (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and devices for amplifying an input RF signal according to at least two gain-states is described. According to one aspect, a multi gain amplifier circuit including a low noise amplifier having a stack of transistors is used for amplification of the input RF signal. When switching from a low gain-state to a high gain-state, the drain-to-source voltage of the output transistor of th...