ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,399,209, issued on Aug. 26, was assigned to pSemi Corp. (San Diego).
"Current measurement for defect detection" was invented by Ronald E. Reedy (San Diego), Robert Mark Englekirk (Littleton, Colo.) and Tero Tapio Ranta (San Diego).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and devices to detect defects in gate oxides of MOSFETs are disclosed. The disclosed methods and devices rely upon current measurements or decay measurements of the voltages across MOS capacitors. The described devices can be implemented in the RF circuits with elements having stringent reliability requirements."
The patent was filed on Sept. 30, 2022, under Application No...