US Patent Issued to PSEMI on April 15 for "Bias techniques for amplifiers with mixed polarity transistor stacks" (British Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,597, issued on April 15, was assigned to PSEMI Corp. (San Diego).

"Bias techniques for amplifiers with mixed polarity transistor stacks" was invented by John Birkbeck (New Milton, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various methods and circuital arrangements for biasing gates of stacked transistor amplifier that includes two series connected transistor stacks of different polarities are presented, where the amplifier is configured to operate according to different modes of operation. Such circuital arrangements operate in a closed loop with a feedback error voltage that is based on a sensed voltage at a common node of the two...