US Patent Issued to President and Fellows of Harvard College on April 1 for "Complementary metal-oxide-semiconductor (CMOS) multi-well apparatus for electrical cell assessment" (Massachusetts Inventors)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,265,076, issued on April 1, was assigned to President and Fellows of Harvard College (Cambridge, Mass.).

"Complementary metal-oxide-semiconductor (CMOS) multi-well apparatus for electrical cell assessment" was invented by Donhee Ham (Cambridge, Mass.), Wenxuan Wu (Cambridge, Mass.), Jeffrey T. Abbott (Cambridge, Mass.), Henry Julian Hinton (Cambridge, Mass.) and Hongkun Park (Cambridge, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are semiconductor devices to provide a CMOS-compatible, wafer-scale, multi-well platform that can be used for biomedical or other applications, and methods to operate the same. In some embodiments, cir...