ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,743, issued on Nov. 4, was assigned to PRAGMATIC SEMICONDUCTOR Ltd. (Cambridge, Great Britain).
"Schottky diode" was invented by Feras Alkhalil (Cambridge, Great Britain), Richard Price (Cambridge, Great Britain) and Brian Cobb (Cambridge, Great Britain).
According to the abstract* released by the U.S. Patent & Trademark Office: "A Schottky diode comprises: a first electrode; a second electrode; and a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface, wherein the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto th...