US Patent Issued to PRAGMATIC SEMICONDUCTOR on July 1 for "Transistor and its method of manufacture" (British Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,405, issued on July 1, was assigned to PRAGMATIC SEMICONDUCTOR Ltd. (Cambridge, Great Britain).

"Transistor and its method of manufacture" was invented by Richard Price (Sedgefield, Great Britain), Nathaniel Green (Sedgefield, Great Britain), Neil Davies (Sedgefield, Great Britain), Adrian Thorndyke (Sedgefield, Great Britain) and Feras Alkhalil (Sedgefield, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor is disclosed, comprising: a layer of semiconductor material comprising a first portion, a second portion, and a third portion connecting the first portion to the second portion and providing a semiconductive channel between...