US Patent Issued to PRAGMATIC SEMICONDUCTOR on July 1 for "Method of fabricating a conductive layer on an IC using non-lithographic fabrication techniques" (British Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,800, issued on July 1, was assigned to PRAGMATIC SEMICONDUCTOR Ltd. (Cambridge, Great Britain).

"Method of fabricating a conductive layer on an IC using non-lithographic fabrication techniques" was invented by Ken Williamson (Sedgefield, Great Britain) and Richard Price (Sedgefield, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a thin-film integrated circuit, IC, including a plurality of electronic components, the method comprising: forming, using a first fabrication technique, the plurality of electronic components, and forming, using a second fabrication technique, a conductive layer on the plurality of elect...