US Patent Issued to Powerlite Semiconductor (Shanghai) on June 17 for "Enhanced radio frequency switch and fabrication methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,218, issued on June 17, was assigned to Powerlite Semiconductor (Shanghai) Co. Ltd. (Shanghai).

"Enhanced radio frequency switch and fabrication methods thereof" was invented by Shuming Xu (Shanghai) and Hang Fan (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A radio frequency (RF) switch device includes a semiconductor substrate, doped with an impurity of a first conductivity type at a first doping concentration level, and a mesa extending vertically from an upper surface of the substrate and formed contiguous therewith. The mesa includes a drift region doped with the impurity of the first conductivity type at a second doping concentratio...