ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,335, issued on Aug. 26, was assigned to Powercube Semi Inc. (Gyeonggi-Do, South Korea).
"Silicon carbide junction barrier Schottky diode with enhanced ruggedness" was invented by Sin Su Kyoung (Hanam-si, South Korea), Tae Jin Nam (Bucheon-si, South Korea), Eun Ha Kim (Bucheon-si, South Korea), Jeong Yun Seo (Yongin-si, South Korea) and Tai Young Kang (Gwangju-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Silicon carbide junction barrier Schottky diode disclosed. Silicon carbide junction barrier Schottky diode includes a first conductivity-type substrate, a first conductivity-type epitaxial layer, being formed by epitaxial growth of ...