US Patent Issued to Powerchip Semiconductor Manufacturing on Sept. 9 for "3D monolithic stacking memory structure with oxide-semiconductor field effect transistor and ferroelectric metal-insulator-metal storage capacitor" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,304, issued on Sept. 9, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan).

"3D monolithic stacking memory structure with oxide-semiconductor field effect transistor and ferroelectric metal-insulator-metal storage capacitor" was invented by Shou-Zen Chang (Hsinchu, Taiwan), Ming-Han Liao (Hsinchu, Taiwan), Min-Cheng Chen (Hsinchu County, Taiwan) and Hiroshi Yoshida (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D monolithic stacking memory structure is provided in the present invention, including a semiconductor substrate, a field effect transistor (FET) on the semiconductor substrate, a plurality of b...