ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,254, issued on Sept. 23, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan).

"Semiconductor structure and manufacturing method thereof" was invented by Li-Peng Chang (Hsinchu, Taiwan) and San-Jung Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure including a substrate, a first isolation structure and a capacitor is provided. The substrate includes a capacitor region. The first isolation structure is disposed in the substrate in the capacitor region. The capacitor is located in the capacitor region. The capacitor includes the substrate in the capacitor region, an electrode laye...