US Patent Issued to Powerchip Semiconductor Manufacturing on Oct. 7 for "High electron mobility transistor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,645, issued on Oct. 7, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan).

"High electron mobility transistor device and manufacturing method thereof" was invented by Jih-Wen Chou (Hsinchu, Taiwan), Hsin-Hong Chen (Hsinchu, Taiwan), Yu-Jen Huang (Hsinchu, Taiwan), Robin Christine Hwang (Taipei, Taiwan), Po-Hsien Yeh (Hsinchu County, Taiwan) and Chih-Hung Lu (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor device including a channel layer, a first barrier layer, a gate structure, and a spacer is provided. The first barrier layer is disposed on the channel layer. The gate st...