US Patent Issued to Powerchip Semiconductor Manufacturing on Oct. 7 for "3D CMOS image sensor structure and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,714, issued on Oct. 7, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan).

"3D CMOS image sensor structure and method of fabricating the same" was invented by Chih-Ping Chung (Hsinchu, Taiwan), Ming-Yu Ho (Taichung, Taiwan) and Saysamone Pittikoun (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D CMOS image sensor is provided in the present invention, including a semiconductor substrate, a photodiode and a well formed in the semiconductor substrate, a shallow trench isolation (STI) layer formed on a front surface of the semiconductor substrate, a fin protruding upwardly from the semiconductor subst...