US Patent Issued to Powerchip Semiconductor Manufacturing on Nov. 25 for "Ferroelectric memory structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,231, issued on Nov. 25, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan).

"Ferroelectric memory structure" was invented by Jyun-Hong Shih (Hsinchu, Taiwan) and Min-Cheng Chen (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric memory structure including a substrate, first and second conductive lines, first and second dielectric layers, a channel pillar, a gate pillar, and a ferroelectric material layer is provided. The first conductive line is located on the substrate. The first dielectric layer is located on the first conductive line. The channel pillar is located on the first conducti...