US Patent Issued to Powerchip Semiconductor Manufacturing on Feb. 3 for "Transistor structure having a charge storage layer arranged between a field plate and a drift region" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,341, issued on Feb. 3, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan).

"Transistor structure having a charge storage layer arranged between a field plate and a drift region" was invented by Jih-Chien Chang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor structure including a substrate, a gate structure, a first doped region, a second doped region, a drift region, a field plate, a charge storage layer, and a first dielectric layer is provided. The gate structure is located on the substrate. The first doped region and the second doped region are located in the substrate on two sides of the gat...