US Patent Issued to Powerchip Semiconductor Manufacturing on Aug. 26 for "High electron mobility transistor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,347, issued on Aug. 26, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan).

"High electron mobility transistor device and manufacturing method thereof" was invented by Jih-Wen Chou (Hsinchu, Taiwan), Chih-Hung Lu (Taichung, Taiwan), Bo-An Tsai (Hsinchu, Taiwan), Zheng-Chang Mu (Hsinchu County, Taiwan), Po-Hsien Yeh (Hsinchu County, Taiwan) and Robin Christine Hwang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor device including a channel layer, a first barrier layer, and a P-type gallium nitride layer is provided. The first barrier layer is disposed on the channel layer. ...