US Patent Issued to Powerchip Semiconductor Manufacturing on Aug. 19 for "GaN device with N2 pre-treatment and method of performing N 2 pre-treatment" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,190, issued on Aug. 19, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan).

"GaN device with N2 pre-treatment and method of performing N 2 pre-treatment" was invented by Po-Hsien Yeh (Taichung, Taiwan), Jih-Wen Chou (Hsinchu, Taiwan), Hwi-Huang Chen (Hsinchu, Taiwan), Hsin-Hong Chen (Hsinchu, Taiwan) and Yu-Jen Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A GaN device with N2 pre-treatment is provided in the present invention, including a GaN substrate, an AlGaN layer covering the GaN substrate, a p-GaN gate on the AlGaN layer, a TiN electrode on the p-GaN gate, a first dielectric layer on the AlGa...