US Patent Issued to Powerchip Semiconductor Manufacturing on Aug. 12 for "High electron mobility transistor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,657, issued on Aug. 12, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan).

"High electron mobility transistor device and manufacturing method thereof" was invented by Robin Christine Hwang (Taipei, Taiwan), Jih-Wen Chou (Hsinchu, Taiwan), Hwi-Huang Chen (Hsinchu, Taiwan), Hsin-Hong Chen (Hsinchu, Taiwan), Yu-Jen Huang (Hsinchu, Taiwan) and Chih-Hung Lu (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A HEMT device including a substrate structure, a channel layer, a barrier layer, a gate electrode, a drain electrode, a first source field plate, a second source field plate, and a dielectric structure is prov...