US Patent Issued to Powerchip Semiconductor Manufacturing on April 15 for "Through-substrate via test structure" (Taiwanese Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,149, issued on April 15, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan).

"Through-substrate via test structure" was invented by Chun-Lin Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A through-substrate via (TSV) test structure including a substrate, a first TSV, and a test device is provided. The substrate includes a test region. The first TSV is located in the substrate of the test region. The test device is located on the substrate of the test region. The test device and the first TSV are separated from each other. The shortest distance between the test device and the first TSV is less than 10 mi...