US Patent Issued to Powerchip Semiconductor Manufacturing on April 15 for "Electrostatic discharge protection device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,460, issued on April 15, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan).

"Electrostatic discharge protection device" was invented by Ming-Hui Chen (Hsinchu, Taiwan), Chih-Feng Lin (Taipei, Taiwan), Chiu-Tsung Huang (Hsinchu, Taiwan) and Hsiang-Hung Chang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrostatic discharge (ESD) protection device including the following components is provided. A first transistor includes a first gate, a first N-type source region, and an N-type drain region. A second transistor includes a second gate, a second N-type source region, and the N-type drain region...