US Patent Issued to POWER INTEGRATIONS on Dec. 30 for "Vertical gallium nitride containing field effect transistor with silicon nitride passivation and gate dielectric regions" (New York Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,312, issued on Dec. 30, was assigned to POWER INTEGRATIONS INC. (San Jose, Calif.).

"Vertical gallium nitride containing field effect transistor with silicon nitride passivation and gate dielectric regions" was invented by Alfred T. Schremer (Ithaca, N.Y.), Richard J. Brown (Ithaca, N.Y.) and James R. Shealy (Ithaca, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Low Pressure Chemical Vapor Deposition (LPCVD) technique is provided to produce improved dielectric/semiconductor interfaces for GaN-based electronic devices. Using the LPCVD technique, superior interfaces are achieved through the use of elevated deposition temperatures (less than700...