US Patent Issued to POWDEC on Oct. 14 for "Normally-off mode polarization super junction GaN-based field effect transistor and electrical equipment" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,250, issued on Oct. 14, was assigned to POWDEC K.K. (Oyama, Japan).

"Normally-off mode polarization super junction GaN-based field effect transistor and electrical equipment" was invented by Hiroji Kawai (Oyama, Japan), Shuichi Yagi (Oyama, Japan) and Hironobu Narui (Oyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "This normally-off mode polarization super junction GaN-based FET has an undoped GaN layer 11, an AlxGa1-xN layer 12, an island-like undoped GaN layer 13, a p-type GaN layer 14 and a p-type InyGa1-yN layer 15 which are stacked in order. The FET has a gate electrode 16 on the uppermost layer, a source electrode 17 and a drain ele...