US Patent Issued to POTENS SEMICONDUCTOR on March 11 for "Circuit and method for improving efficiency by use of external inductor for temperature control" (Taiwanese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,980, issued on March 11, was assigned to POTENS SEMICONDUCTOR CORP. (Zhubei, Taiwan).

"Circuit and method for improving efficiency by use of external inductor for temperature control" was invented by Wen Nan Huang (Hsinchu County, Taiwan), Ching Kuo Chen (Hsinchu County, Taiwan), Shiu Hui Lee (Hsinchu County, Taiwan), Hsiang Chi Meng (Hsinchu County, Taiwan) and Chih Ming Yu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit and a method for improving efficiency by use of external inductor for temperature control, wherein the operating temperature of a field effect transistor is calculated by the inductor voltage. The ...