US Patent Issued to POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION on Oct. 28 for "Method for manufacturing graphene thermoelectric device and graphene thermoelectric device manufactured thereby" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,901, issued on Oct. 28, was assigned to POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION (Pohang-si, South Korea).

"Method for manufacturing graphene thermoelectric device and graphene thermoelectric device manufactured thereby" was invented by Byoung Hun Lee (Pohang-si, South Korea) and Hyeon Jun Hwang (Pohang-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are a method for manufacturing a graphene thermoelectric device and a graphene thermoelectric device manufactured thereby. The method for manufacturing a graphene thermoelectric device includes: forming a graphene channel layer on a substrate; forming a thermo...