US Patent Issued to POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION on Oct. 21 for "Electronic device including heterogeneous singlecrystal transition metal oxide layer disposed on substrate, and method for manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,131, issued on Oct. 21, was assigned to POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION (Pohang-si, South Korea).

"Electronic device including heterogeneous singlecrystal transition metal oxide layer disposed on substrate, and method for manufacturing the same" was invented by Junwoo Son (Pohang-si, South Korea), Yunkyu Park (Pohang-si, South Korea), DongKyu Lee (Pohang-si, South Korea), Si-Young Choi (Pohang-si, South Korea) and Hyeji Sim (Pohang-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is an electronic device including a semiconductor substrate, a single-crystal first transition metal oxide layer on the semicond...