US Patent Issued to POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION on Dec. 16 for "Buffer material composed of bentonite modified with layered double hydroxide(LDH) and method of preparing the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,496,568, issued on Dec. 16, was assigned to POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION (Pohang-si, South Korea).

"Buffer material composed of bentonite modified with layered double hydroxide(LDH) and method of preparing the same" was invented by Ju Eun Kim (Pohang-si, South Korea), Seok Ju Hong (Pohang-si, South Korea) and Woo Yong Um (Pohang-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a method of preparing a buffer material composed of bentonite modified with a layered double hydroxide (LDH) as a buffer material used for deep geological disposal of radioactive waste, the method including a s...