US Patent Issued to POSTECH ACADEMY-INDUSTRY FOUNDATION on Feb. 10 for "Method for preparing low-loss hydrogenated amorphous silicon that is transparent in visible light, method for preparing low-loss hydrogenated amorphous silicon nitride that is transparent in visible light, and method for preparing low-loss hydrogenated amorphous silicon oxide that is transparent in visible light" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,545,995, issued on Feb. 10, was assigned to POSTECH ACADEMY-INDUSTRY FOUNDATION (Pohang-si, South Korea).

"Method for preparing low-loss hydrogenated amorphous silicon that is transparent in visible light, method for preparing low-loss hydrogenated amorphous silicon nitride that is transparent in visible light, and method for preparing low-loss hydrogenated amorphous silicon oxide that is transparent in visible light" was invented by Jun Suk Rho (Pohang-si, South Korea), Young Hwan Yang (Jeju-si, South Korea) and Gwan Ho Yoon (Pohang-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to an embodiment of the present invention, there...