US Patent Issued to Plessey Semiconductors on May 13 for "LED precursor incorporating strain relaxing structure" (British Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,763, issued on May 13, was assigned to Plessey Semiconductors Ltd. (Plymouth, Great Britain).

"LED precursor incorporating strain relaxing structure" was invented by Andrea Pinos (Plymouth, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Light Emitting Diode (LED) precursor comprising a first semiconducting layer, and a monolithic LED structure provided on a growth surface of the first semiconducting layer is provided. The first semiconducting layer includes a mesa structure extending from a major surface of the first semiconducting layer. The first semiconducting layer comprises a first semiconducting sublayer having a first in-plane...