ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,257, issued on April 15, was assigned to Plessey Semiconductors Ltd. (Plymouth, Great Britain).
"Light Emitting Diode and method of forming a Light Emitting Diode" was invented by Andrea Pinos (Plymouth, Great Britain), Simon Ashton (Plymouth, Great Britain) and Samir Mezouari (Plymouth, Great Britain).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a Light Emitting Diode (LED) precursor comprising: forming a first semiconducting layer comprising a Group III-nitride on a substrate, selectively removing a portion of the first semiconducting layer to form a mesa structure, and forming a monolithic LED structure. According to the metho...