ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,372, issued on Oct. 14, was assigned to PlayNitride Display Co. Ltd. (MiaoLi County, Taiwan).

"Micro light emitting diode structure" was invented by Chee-Yun Low (MiaoLi County, Taiwan), Yun-Syuan Chou (MiaoLi County, Taiwan), Hung-Hsuan Wang (MiaoLi County, Taiwan), Pai-Yang Tsai (MiaoLi County, Taiwan), Fei-Hong Chen (MiaoLi County, Taiwan) and Tzu-Yang Lin (MiaoLi County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A micro light emitting diode structure including an epitaxial structure, a first insulating layer and a second insulating layer is provided. The epitaxial structure includes a first type semiconductor layer, a light emitting ...