ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,359, issued on Oct. 14, was assigned to PlayNitride Display Co. Ltd. (MiaoLi County, Taiwan).
"Epitaxial structure and micro light emitting device" was invented by Shen-Jie Wang (MiaoLi County, Taiwan) and Kuang-Yuan Hsu (MiaoLi County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An epitaxial structure includes a quantum well structure, a first type semiconductor layer, and a second type semiconductor layer. The quantum well structure has an upper surface and a lower surface opposite to each other and includes at least one quantum well layer and at least one quantum barrier layer stacked alternately. The quantum well layer includes at leas...