ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,481, issued on June 17, was assigned to PlayNitride Display Co. Ltd. (MiaoLi County, Taiwan).
"Micro light-emitting diode" was invented by Chi-Heng Chen (MiaoLi County, Taiwan), Kuang-Yuan Hsu (MiaoLi County, Taiwan), Shen-Jie Wang (MiaoLi County, Taiwan), Jyun-De Wu (MiaoLi County, Taiwan), Yi-Ching Chen (MiaoLi County, Taiwan) and Yi-Chun Shih (MiaoLi County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A micro light-emitting diode includes a first stacked layer, a second stacked layer, a third stacked layer, a bonding layer, at least one etch stop layer, and a plurality of electrodes. The second stacked layer is disposed between the firs...