ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,383,923, issued on Aug. 12, was assigned to Picosun Oy (Espoo, Finland).
"Atomic layer deposition with plasma source" was invented by Vaino Kilpi (Espoo, Finland), Wei-Min Li (Espoo, Finland), Timo Malinen (Espoo, Finland), Juhana Kostamo (Espoo, Finland) and Sven Lindfors (Espoo, Finland).
According to the abstract* released by the U.S. Patent & Trademark Office: "The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towar...