ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,733, issued on July 8, was assigned to PHLUX TECHNOLOGY Ltd. (Great Britain).
"Avalanche photodiode structure" was invented by Chee Hing Tan (Sheffield, Great Britain).
According to the abstract* released by the U.S. Patent & Trademark Office: "An avalanche photodiode (APD) structure, comprising an absorption layer comprising InGaAs, InGaAlAs, InGaAsP, or an InGaAs/GaAsSb type-II superlattice, an avalanche layer comprising AlGaAsSb, and a transition portion disposed between the absorption layer and the avalanche layer is disclosed. The transition portion comprises a first grading layer of InAlGaAs or InGaAsP and a first field control layer disposed between the first grading layer ...