US Patent Issued to PHISON ELECTRONICS on Sept. 16 for "Layout structure of differential lines, memory storage device and memory control circuit unit" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,996, issued on Sept. 16, was assigned to PHISON ELECTRONICS CORP. (Miaoli, Taiwan).

"Layout structure of differential lines, memory storage device and memory control circuit unit" was invented by Kang-Yun Yang (Hsinchu County, Taiwan), Yang-Tse Hung (Hsinchu County, Taiwan), Chao-Cheng Ku (Taoyuan, Taiwan) and Li-Yuan Lee (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A layout structure of differential lines, a memory storage device and a memory control circuit unit are provided. The layout structure of the differential lines includes a wiring layer, a first wire and a second wire. The first wire is arranged on the wiring layer and ...