US Patent Issued to PHISON ELECTRONICS on May 6 for "Memory control method, memory storage device and memory control circuit unit" (Taiwanese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,292,825, issued on May 6, was assigned to PHISON ELECTRONICS CORP. (Miaoli, Taiwan).

"Memory control method, memory storage device and memory control circuit unit" was invented by Sheng-Min Huang (Hsinchu County, Taiwan) and Shih-Ying Song (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory control method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: generating a first operation command via one of a plurality of processing circuits, wherein the first operation command instructs to access a first memory group in a plurality of memory groups; and in response to a first state informa...