US Patent Issued to PDF Solutions on Sept. 16 for "Embedded system to characterize BTI degradation effects in MOSFETs" (American, Italian Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,416,663, issued on Sept. 16, was assigned to PDF Solutions Inc. (Santa Clara, Calif.).

"Embedded system to characterize BTI degradation effects in MOSFETs" was invented by Michele Quarantelli (Brescia, Italy), Alberto Piadena (Guidizzolo, Italy), Tomasz Brozek (Morgan Hill, Calif.), Christopher Hess (Belmont, Calif.), Larg Weiland (Hollister, Calif.) and Sharad Saxena (Richardson, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A novel system for in-product Bias Temperature Instability (BTI) characterization that allows for characterization of transistor degradation rates is disclosed; it is self-testing and can be embedded in real products withou...