US Patent Issued to Parabellum Strategic Oppurtunities Fund on Oct. 14 for "Semiconductor structure with source/drain multi-layer structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,255, issued on Oct. 14, was assigned to Parabellum Strategic Oppurtunities Fund LLC (Austin, Texas).

"Semiconductor structure with source/drain multi-layer structure and method for forming the same" was invented by Chun-Chieh Wang (Kaohsiung, Taiwan), Yu-Ting Lin (Tainan, Taiwan), Yueh-Ching Pai (Taichung, Taiwan), Shih-Chieh Chang (Taipei, Taiwan) and Huai-Tei Yang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure formed over a fin structure, and a gate spacer layer formed on a sidewall surface of the gate s...