ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,816, issued on Nov. 4, was assigned to Parabellum Strategic Opportunities Fund LLC (Austin, Texas).
"Semiconductor device and method for forming the same" was invented by Jhon-Jhy Liaw (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a semiconductor fin, a gate structure, a source structure, a drain structure, a source contact, and a drain contact. The semiconductor fin extends upwardly from the substrate. The gate structure extends across the semiconductor fin. The source structure is on the semiconductor fin. The drain structure is on the semiconductor fin, in which the source and d...