ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,746, issued on Nov. 11, was assigned to Parabellum Strategic Opportunities Fund LLC (Austin, Texas).
"Contact structure of a semiconductor device" was invented by Joanna Chaw Yane Yin (Hsinchu, Taiwan) and Hua Feng Chen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Devices and methods that include for configuring a profile of a liner layer before filling an opening disposed over a semiconductor substrate. The liner layer has a first thickness at the bottom of the opening and a second thickness a top of the opening, the second thickness being smaller that the first thickness. In an embodiment, the filled opening provides a contact s...