US Patent Issued to Parabellum Strategic Opportunities Fund on May 20 for "Method and structure for semiconductor device having gate spacer protection layer" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,238, issued on May 20, was assigned to Parabellum Strategic Opportunities Fund LLC (Austin, Texas).

"Method and structure for semiconductor device having gate spacer protection layer" was invented by Chih Wei Lu (Hsinchu, Taiwan), Chung-Ju Lee (Hsinchu, Taiwan), Hai-Ching Chen (Hsinchu, Taiwan), Chien-Hua Huang (Miaoli County, Taiwan) and Tien-I Bao (Taoyuan County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes providing a precursor. The precursor includes a substrate; a gate stack over the substrate; a first dielectric layer over the gate stack; a gate spacer on sidewalls of the gate stack...