US Patent Issued to PANJIT INTERNATIONAL on Sept. 2 for "Metal oxide semiconductor with multiple drain vias" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,407, issued on Sept. 2, was assigned to PANJIT INTERNATIONAL INC. (Kaohsiung, Taiwan).

"Metal oxide semiconductor with multiple drain vias" was invented by Chung-Hsiung Ho (Kaohsiung, Taiwan), Chih-Hung Chang (Kaohsiung, Taiwan) and Chi-Hsueh Li (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A metal oxide semiconductor (MOS) with multiple drain vias includes a semiconductor substrate, which is divided into a gate region, a source region and a drain region. On the same surface of the semiconductor substrate in the gate region, a connection layer is formed in the source region and the drain region with a low-resistance metal material. ...