US Patent Issued to Panjit International on Nov. 11 for "Manufacturing method of forming semiconductor device and semiconductor device" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,340, issued on Nov. 11, was assigned to Panjit International Inc. (Kaohsiung, Taiwan).

"Manufacturing method of forming semiconductor device and semiconductor device" was invented by Hung Shen Chu (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device and the structure of the semiconductor device are provided. The manufacturing method includes the following steps of: providing a native substrate; sequentially forming a first nucleation layer, a thick GaN substrate layer, a second nucleation layer, an AlGaN barrier layer, a GaN channel layer and a leakage current stop layer; forming an aperture area ...