US Patent Issued to PANJIT INTERNATIONAL on Jan. 13 for "Heterostructure field effect transistor (HFET) device including controllable dual carrier flow current channel" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,022, issued on Jan. 13, was assigned to PANJIT INTERNATIONAL INC. (Kaohsiung, Taiwan).

"Heterostructure field effect transistor (HFET) device including controllable dual carrier flow current channel" was invented by Hung Shen Chu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a substrate, a nucleation layer, a buffer layer, a superlattice stack, a cap layer, a first transistor area and a second transistor area. The first superlattice stacked layers form a two dimensional electron gas carrier transport to generate a first current channels group and the second super...