US Patent Issued to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT on Sept. 16 for "Nitride semiconductor device with suppressed leakage current and method of fabricating the same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,069, issued on Sept. 16, was assigned to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT Co. LTD. (Osaka, Japan).

"Nitride semiconductor device with suppressed leakage current and method of fabricating the same" was invented by Hideyuki Okita (Toyama, Japan), Masahiro Hikita (Hyogo, Japan) and Manabu Yanagihara (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor device includes a semiconductor layered structure including a substrate, a channel layer, and a barrier layer. The channel layer is formed above the substrate and made of a nitride semiconductor layer. The barrier layer is formed on the channel layer, has a wider...